Lattice Site Location Studies of Rare-Earths Implanted in ZnO Single-Crystals

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Implantation site of rare earths in single-crystalline ZnO

The lattice location of rare earth Er in single-crystalline hexagonal ZnO was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation of the precursor isotope Tm at doses of 1.3−2.8×10 cm and annealing up to 900°C, the angular distribution of conversion electrons emitted by the radioactive isotope Er was measured by a position-sensitive electron det...

متن کامل

Lattice location and stability of implanted Cu in ZnO

The lattice location of copper in single-crystalline zinc oxide was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation at a fluence of 2.3310 cm, the angular distribution of b particles emitted by the radioactive isotope Cu was measured by a position-sensitive detector. The b emission patterns give direct evidence that in the as-implanted state...

متن کامل

Lattice site and stability of implanted Ag in ZnO

Lattice site and stability of implanted Ag in ZnO E. Rita , U. Wahl, A.M.L.Lopes, J.P.Araújo , J.G. Correia , E.Alves , J.C.Soares , The ISOLDE Collaboration a Instituto Tecnológico e Nuclear, Sacavém, Portugal b Centro de Física Nuclear da Universidade de Lisboa, Lisbon, Portugal c Departamento de Física da Universidade de Aveiro, Aveiro, Portugal d IFIMUP, University of Porto, Porto, Portugal...

متن کامل

Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals

We report Fe-related emission in ion-implanted ZnO single crystals. Iron ions were implanted at room temperature with 100 keV and a fluence of 1310 Fe/cm, and were submitted to annealing treatments in vacuum and in air. After implantation, the damage raises the minimum yield (xmin) from 2% to 50%. Annealing in an oxidizing atmosphere leads to a reduction of the implantation damage, which is ful...

متن کامل

LATTICE LOCATION AND OPTICAL ACTIVATION OF RARE EARTH IMPLANTED GaN

This paper reviews the current knowledge on rare earths (REs) implanted into GaN with a special focus on their lattice location and on the optical activation by means of thermal annealing. While emission channeling experiments have given information on the lattice location of rare earths following low-dose (≈10 cm) implantation, both in the asimplanted state and after annealing up to 900°C, the...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: MRS Proceedings

سال: 2002

ISSN: 0272-9172,1946-4274

DOI: 10.1557/proc-744-m3.7